Abstract
The etch of poly Si by aqueous tetramethylammonium hydroxide (TMAH) was investigated and how the etch rate is affected by the dissolved oxygen (DO) concentration in the solution was modeled. The model shows good capability to predict the DO in the TMAH at different positions on the wafer and to estimate the silicon etch rate at a given location. Experimental results confirm the model predictions. However, DO consumption within high aspect ratio (HAR) features causes different etch rates between the top and bottom of the structure. This difficulty can be solved by controlling the DO concentration inside the HAR features.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
