Abstract
Two types of vertically stacked graphene junction diodes were fabricated in this study. Samples of single-crystal graphene measuring 100 mm2 were epitaxially grown on SiC substrate using the thermal decomposition method and were bonded using the direct bonding technique. The direct-bonded stacked junction diode exhibited nonlinear current-voltage characteristics and acted as a far-infrared emitter. Fowler-Nordheim tunneling phenomena with a strong nonlinear behavior was observed in the tunneling diode with a thin insulative layer (air gap or structured water). By using simple device-assembly processes, vertically stacked graphene diodes with new functions were successfully fabricated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
