(Invited) Vapor-Deposited MOFs As Gap-Filling Low-k Dielectrics

Abstract

Metal-organic frameworks (MOFs) are an intriguing class of porous crystalline materials with record internal surface areas. There is tremendous potential for integrating MOFs into microelectronics, e.g. as active sensor coatings or low-k dielectrics.[1] A key enabling step in leveraging the properties of MOFs in microelectronics will be the development of robust thin film deposition methods. Most procedures for the deposition of MOF thin films are incompatible with microelectronic fabrication because of corrosion and contamination issues. We recently demonstrated chemical vapor deposition (CVD) of MOF thin films.[2] The MOF-CVD process allows conformal growth of thin films and extends MOF processing to one of the most commonly used techniques in thin film research and manufacturing. Future directions and potential applications of MOF-CVD coatings will be discussed, with special attention to their integration as gap-filling low-k materials in on-chip interconnects.