Abstract
In the framework of Resistive RAM we are investigating if the metal to insulator transition in vanadium dioxide can be used for memory applications. We investigate vanadium dioxide production by low pressure oxidation of metallic vanadium and demonstrate samples with 4 orders of magnitude transition in resistivity. We show that the relaxation times to the coexistence state are compatible with non-volatile memory requirements being longer than 10 years. We also investigate how metal doping influences the transition temperature.
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