Abstract
Homoepitaxial growth of GaN yields significantly higher quality material and, thus, expands the application space for commercially competitive III-nitride based devices. A critical aspect in controlling homoepitaxial growth consists of understanding impurity incorporation at the interface of GaN grown on GaN. This paper investigates the source of impurity incorporation at the regrowth interface for a MOCVD process and the associated effects on lateral high-electron mobility transistor device structures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
