Abstract
In this article, we expand on the wide body of experimental and theoretical knowledge of charge trapping phenomena in eGaN devices that cause dynamic on-resistance shifting. We describe in detail a flexible test circuit used to measure RDS(on) in real time as devices are switched in different modes. Using an ultra-fast synchronized clipper FET, we obtain accurate measurements as soon as ~25 ns after the turn-on transition, showing that eGaN FETs switch to a low resistance state immediately without any lingering de-trapping effects that are observed in other GaN technologies. Comparing hard-switching of resistive versus inductive loads, we find very low dynamic RDS(on) shifting in either case when parts are operated at or below datasheet VDSmax. For parts operated well above datasheet limits, we measure long-term RDS(on) growth for 100V and 200V devices, and find the data is in good agreement with our hot carrier trapping model.
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