Abstract
We discuss the instability of trench-gated MOSFET under high temperature reverse-bias stress (HTRB) and highly accelerated temperature & humidity stress test (HAST). We have observed that gate oxide interface trap density has been increased at both HTRB stress and HAST stress. However humid HAST stress is observed to further introduce mobile positive charge in the gate oxide of the trench-gated MOSFET. This positive charge is argued to be proton (H+). The HTRB stress or HAST stress is a negative bias temperature instability (NBTI) in a parasitic p-channel MOSFET structure occurring in the trench-gate n-channel MOSFET. The NBTI is enhanced by the presence of moisture in the oxide.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
