Abstract
We investigated the trapping mechanism of charge trap capacitor with an Al2O3-tunneling layer (AlO-TL), high-k-charge trapping layer (High-k-CTL), and an Al2O3-blocking layer (AlO-BL). Pt-gated charge trap capacitors such as Al2O3/(Ta/NbOx)/Al2O3 (ATNA), Al2O3/ZrO2/Al2O3 (AZA), and Al2O3/HfZrOx/Al2O3 (AHZA) were prepared by atomic layer deposition and annealing processes. We observed the different flatband voltage (Vfb) shift behavior among ATNA, AZA and AHZA under program mode. The normalized Vfb shift of the AZA and AHZA satisfy a linear equation as a function of the thicknesses of a crystallized ZrO2 (ZrO-CTL) and a ferroelectric (Hf/Zr)Ox (HZO-CTL), indicating that the injected electrons are piled up at both AlO-TL/High-k-CTL and High-k-CTL/AlO-BL interfaces. On the other hand, the normalized Vfb shift of the ATNA unchanged regardless of the thickness of an amorphous (Ta/Nb)Ox (TNO-CTL), indicating that the injected electrons are dominantly located at the TNO-CTL/AlO-BL interface.
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