(Invited) Transistor-Based Extraction of Carrier Lifetime and Interface Traps Densities in Silicon-on-Insulator Materials

Abstract

This paper presents the main transistor-based extraction methods for the carrier lifetime and the interface trap density in Silicon-On-Insulator materials. The device/technology under analysis begins with the partially-depleted SOI MOSFET, following by the fully depleted SOI with ultra-thin buried oxide (UTBOX)devices. The results show that the major part of the method may be extended but requires some careful analysis/interpretation and sometime a correction factor.