Abstract
This paper presents the main transistor-based extraction methods for the carrier lifetime and the interface trap density in Silicon-On-Insulator materials. The device/technology under analysis begins with the partially-depleted SOI MOSFET, following by the fully depleted SOI with ultra-thin buried oxide (UTBOX)devices. The results show that the major part of the method may be extended but requires some careful analysis/interpretation and sometime a correction factor.
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