Abstract
Vertical III-V nanowire (NW) is a promising channel material for high-speed switching devices in future integrated circuits because surrounding-gate structures have good electrostatic gate controllability while suppressing inherent large leakage current in III-V channels and outperform lateral switching devices in terms of power consumption while keeping good scalability. As for the integration of III-V NWs on Si, direct integration of vertical III-V NWs by selective-area growth has advantages for high -performance transistor applications because of position/size-uniformity and core-shell structure with modulation doping.
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