(Invited) Thermoelectric properties of Fermi-level tuned and Aligned Single Wall Carbon Nanotubes

Abstract

Single wall carbon nanotubes (SWCNTs) are one-dimensional materials with sharp van Hove singularities. Preparation of SWCNTs with a selected electronic structure, fabrication of their aligned thin films[1] and tuning their Fermi level allow us to reveal unique phenomena, which cannot be observed or correctly understood in conventional SWCNT random network thin films. For example, we observed anomalously large optical absorption for perpendicular polarization to the tube axis in highly doped aligned SWCNTs, which is related to intersubband transition plasmon phenomena in SWCNTs.[2] Here in this talk, we would like to discuss the thermoelectric phenomena in fermi level tuned and aligned SWCNTs. In our society, a large amount of heat at relatively low temperature, which is emitted from factories, houses, human bodies, and so on, is left unused. Development of high-performance flexible thermoelectric devices is crucial to efficiently convert such unused waste heat into electric power. Understanding of relationships between electrical conductivity, Seebeck coefficient, and thermal conductivity in thin films of flexible materials and tuning of these parameters is crucial to improve the performance. Since the seminal study by Hicks and Dresselhaus,[3] the thermoelectric properties of low dimensional materials have been intensively studied, but it still has been of great importance to experimentally clarify how the one dimensional electronic structures can influence and enhance its thermoelectric properties, although there are several important theoretical predictions for enhancement of thermoelectric properties in one-dimensional electronic systems.[3,4] SWCNTs are a model of one-dimensional flexible materials, and will play important roles for realization of high-performance flexible thermoelectric devices. Previously, we revealed how the location of Fermi-level influences the thermoelectric properties of semiconducting SWCNTs with diameter of 1.4 nm using electrolyte gating approaches.[5] However, in the previous study, the purity of chirality was not enough to clarify the intrinsic characteristics of semiconducting SWCNTs. In this talk, we will discuss the relationships between electronic structures, Fermi-level and thermoelectric properties using single chirality SWCNTs. In addition, we will discuss how the thermoelectric properties and conductivities exhibit isotropic or an-isotropic properties in aligned SWCNT thin films.[6] Acknowledgment: K.Y. acknowledges support by JST CREST through Grant Number JPMJCR17I5, Japan