Abstract

In this study we tested the effectiveness of graphene as a solid state diffusion barrier for titanium, which forms a strong bond with graphene and copper, which is weakly bonded to graphene. E-beam deposited titanium films on silicon were annealed with and without graphene barrier layers to determine if graphene will prevent a titanium silicide layer from forming. In addition copper on silica was studied with a graphene barrier to determine if the graphene would prevent copper diffusion into the underlying substrate. For titanium, the graphene layer is sacrificial and prevents or inhibits silicide formation. In the case of copper, surface diffusion of copper clusters on graphene is the failure mechanism and not diffusion through the graphene barrier.

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