Abstract
This study reviews the modern knowledge about the electronic properties of oxygen vacancies in the hafnia. Hafnia is a key dielectric for use in the modern electronics. Oxygen vacancies in the hafnia largely determine its electronic properties. It is shown that electronic transitions to states, localized on the oxygen vacancies, determine the optical properties. The oxygen vacancies act as traps in the charge transport via hafnia films. It is demonstrated that the hafnium oxide conductivity is limited by phonon assisted tunneling between traps that are the oxygen vacancies.
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