Abstract
HfO2 has been implemented as gate oxide in high volume manufacturing since 45nm CMOS technology. It has also been used as the insulator in MIM decoupling capacitors to reduce noise (and thus enhance microprocessor performance) starting at 90nm high performance CMOS technology. There is a strong interest from the industry to re-use HfO2 as memory element for AI applications. This paper reviews “past accomplishments” of HfO2 and current efforts and challenges to enable HfO2 as a resistive or ferroelectric memory material.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
