Abstract
TiO2 and Al-doped TiO2 (ATO) films were deposited at 250 oC on Ir substrates by an atomic layer deposition. The phase of the deposited film was controlled by the O3 feeding time. Rutile TiO2 films on Ir could be deposited above the O3 feeding time of 35 s. At long O3 feeding times, the TiO2 and ATO films showed excellent electrical properties (higher dielectric constant, smaller tox, and low leakage current).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
