(Invited) Structural and Electrical Characterization of TiO2 and Al-Doped TiO2 Films on Ir Electrode for Next Generation DRAM Capacitor

Abstract

TiO2 and Al-doped TiO2 (ATO) films were deposited at 250 oC on Ir substrates by an atomic layer deposition. The phase of the deposited film was controlled by the O3 feeding time. Rutile TiO2 films on Ir could be deposited above the O3 feeding time of 35 s. At long O3 feeding times, the TiO2 and ATO films showed excellent electrical properties (higher dielectric constant, smaller tox, and low leakage current).