Abstract
Hole-doping of GaX, InX (X=S or Se) and SnO monolayers is predicted to induce a stable ferromagnetic order in these two-dimensional materials, making them potentially interesting for nanoscaled spintronic devices. We discuss here results from first-principles simulations on the p-type doping induced Stoner ferromagnetism in these 2D materials. Hole doping, induced by intrinsic and extrinsic point defects is considered. Metal vacancies are found to produce shallow spin-polarized gap states near the valence band edge, leading to a p-type behavior. Among the investigated potential extrinsic defects (dopants), As substitution of the oxygen atoms in SnO or Bi substitution of the selenium atoms in InSe appears to be good candidates for the hole doping of these 2D materials.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
