Abstract
The monolayers of group VI transition metal dichalcogenides feature a valence band spin splitting with opposite sign in the two valleys located at corners of 1st Brillouin zone. This spin-valley coupling, particularly pronounced in tungsten dichalcogenides, can benefit potential spintronics and valleytronics with the important consequences of spin-valley interplay and the suppression of spin and valley relaxations. In this talk we discuss the spin-valley coupling in monolayers and multilayers WS2. We explored the interplay of spin and valley degrees of freedom with photocurrent experiments. We experimentally demonstrate that this giant spin-valley coupling, together with the valley dependent physical properties, may lead to rich possibilities for manipulating spin and valley degrees of freedom in these atomically thin 2D materials.
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