Abstract
Sonication imparts localized high pressure and temperature to a fluid. In sonoelectrochemistry, high intensity sonication is imparted to an electrode placed far from the sonicator. Here, possible advantages of a lower intensity sonicator placed near the electrode surface are considered. A sketch of the acoustic pressure in the thin layer configuration differs from the response found for the electrode far from the sonicator. Acoustic pressure is proportional to the energy at the electrode surface. For a given oscillator intensity, the acoustic pressure is enhanced for the electrode near the oscillator surface. The limits of what defines a thin layer configuration are estimated. The sketch is derived by solution of the wave equation that defines the acoustic pressure.
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