Abstract
A light source made of group IV elements is the only missing device component to realize full monolithic integration on a Si chip to realize the convergence of photonics and electronics by Si photonics. It is well known that Si becomes an efficient light source in quantum confined structures like dots, wires and wells. These nanostructures were previously made by bottom up processes. These days, modern silicon fabrication technology is matured enough to make light-emitting silicon and germanium quantum wells by top down processes. We would like to review our several approaches to develop Si/Ge light sources fabricated in a standard Si process line.
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