(Invited) Selective Area Growth, Etching, and Doping of GaN By MOCVD for Power Electronics

Abstract

The lack of selective-area doping technique in GaN greatly hinders the demonstration of sophisticated device structures for high power application. We explored the possibility of using selective-area etching followed by selective area growth to achieve SAD. For the etching step, we explored the in-situ TBCl etching, where we achieved controlled etch rate and smooth trenches. The TBCl etching was proven to be a low-damage etching process compared to the conventional dry etching. Moreover, selective area growth of p-GaN in a patterned trench was analyzed by atom probe tomography (APT). We found Mg atoms cannot diffuse on the GaN surface, which led to an observed inverse proportionality between Mg concentration and local growth rate. However, it was discovered that Mg precursors, like Ga, exhibit inter-trench diffusion through the gas phase.