(Invited) Scalable Growth of Two-Dimensional Materials – a Prerequisite for Process Integration

Abstract

Two-dimensional (2D) materials are seen as potential candidates for small scale devices in parallel with existing and matured Si technology to further fulfill Moore’s law. Graphene, while it holds promise for radio-frequency (RF) and tetra-hertz (THz) applications, is not suitable for logic applications due to its semi-metallic nature and lack of band-gap. Therefore, we turn towards other semiconducting 2D materials like transition metal dichalcogenides (TMDs) like MoS2, WS2 etc. with sizeable bandgap. However, 2D materials should be grown at large-scales with processes compatible with complementary metal oxide semiconductor technology which is a must for process integration. Chemical vapor deposition (CVD) synthesis of 2D materials is a potential technique to fulfill these requirements. We discuss current start-of-the-art CVD technology of graphene and MoS2 and the open issues related to their growth, scalability and compatibility with CMOS.