Abstract
This paper discusses the role of interface engineering in achieving self-current compliance (SCC) controlled Resistive Random Access Memory (ReRAM) devices based on MgO switching oxides. Our results indicate that interfacial layers (IL) such as Ti and TiOx allows switching with SCC in MgO based ReRAM devices. Set/Reset voltages of 1.4V/-1.8V were obtained with 60 ns programming pulses which demonstrates potential for low voltage operations. Interestingly, both set and reset currents decreased with an increase in the TiOx layer thickness up to 7 nm. These results indicated that the optimization of MgO/TiOx stack can solve the pending issue of compliance current control circuitry requirement in high density ReRAM devices.
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