Abstract
Various intermediate treatments (annealing or plasma exposure) during cyclic atomic layer deposition process demonstrate enhanced EOT scaling over a single post-deposition annealing (PDA). In this work we have investigated the reliability of TiN/Hf0.2Zr0.8O2/SiON/Si gate stack where Hf0.2Zr0.8O2 was deposited by either intermediate annealing or exposure to Ar plasma in a cyclical process. The results were compared with the samples where the dielectric was deposited without any intermediate treatment. Stress-induced flat-band voltage shift (ΔVFB) and stress induced leakage current (SILC) indicate that intermediate plasma exposure yields improved reliability characteristics by suppressing the trap formation. Alloying of ZrO2 with HfO2 to form Hf1-xZrxO2 films with higher x value enhanced reliability performance further when compared to HfO2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
