(Invited) Relationship between Ferroelectricity and Electrical Breakdown in Hf-Zr-O Thin Films

Abstract

Ferroelectricity of HfO2-based thin films is a new physical property discovered in 2011. This property is now expected to utilize in the development of high-density non-volatile memories and ferroelectric-gate FETs on LSI. In order to apply the ferroelectricity in electron devices, it is important to examine the correlation between the ferroelectricity and other electrical properties. In this work, we deposited Hf-Zr-O films by sputtering, fabricated metal/ferroelectric/metal capacitors, and examined their electrical properties. Relationship between the ferroelectric properties of remnant polarization and coercive field and the dielectric properties of dielectric constant and breakdown field were investigated by changing the thickness and metal composition of Hf-Zr-O films. Through the analyses, the determinant factor of electrical breakdown in HfO2-based ferroelectric films is discussed.