Abstract
Chemical Mechanical Planarization (CMP) has emerged as a critical process step for achieving angstrom-level uniformity in advanced integrated circuit manufacturing and has ultimately led to the extension of Moore’s Law. Due to the emergence of these sub-7 nm technologies, next generation CMP slurry formulations have continued to increase in additive complexity to meet stringent device specifications. Currently, the most common processing condition to modulate removal rate is the use of mechanical parameters (i.e. downforce, flow rate, and platen speed). However, these parameters may manifest in increased defectivity (i.e. scratches and dishing/erosion) due to increased shear force/friction and chemical activity. This work focuses on the utilization of photo switching mechanisms to tune the slurry nanoparticle surface to enhance its electrophilicity and ultimately increase the rate of removal upon irradiation. More specifically, this presentation will discuss two modes of photo-switching to selectively modulate oxide removal rates. One mode exploits a photo-induced adsorption/desorption mechanism to alter the oxygen vacancy availability to provide an “off/on” switch for removal. While another mode utilizes a light induced ligand-metal charge transfer (LMCT) in which the particle is reduced and the functional additive is desorbed allowing for greater oxygen vacancies as well as less steric hinderance.
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