Abstract
Aluminum gallium nitride (AlGaN) nanowires become an attractive material platform for semiconductor deep ultraviolet (UV) light emitting devices. In this paper, recent progress on AlGaN nanowire deep UV light-emitting diodes (LEDs) is presented. We first show that by exploiting the compositional fluctuations within the AlGaN nanowires, light emission wavelength as short as 209 nm can be obtained. Angle dependence studies further indicate a dominant surface emission, originated from the light scattering effect of nanowires. We further demonstrate that graphene electrode can be a current spreading layer for AlGaN nanowire deep UV LEDs and compared with using thin metal contact the light output power is improved. We lastly describe a new direction of employing nanowires for AlGaN deep UV LEDs.
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