Abstract
Mobility (mob) and Lg dependence of high-field velocity (v) is systematically investigated. A wide variety of mob characteristics is realized with various gate dielectrics of SiO2, SiON, HfLaSiON, and HfLaAlSiON. At Lg=30nm, the sensitivities of v to mob and scaling in Lg, (dv/v)/(dmob/mob) and (dv/v)/(dLg/Lg), are 0.43 and -0.45, respectively: in quasi-ballistic transport regime, mob and scaling in Lg still play an important role on Ion improvement with v enhancement. High-k MISFETs do not show any particular v degradation in high-energy carrier transport. Mob-Tinv characteristics required for sub-22nm-node high-k gate-stacks are discussed based on the experimental data for mob and Lg dependence of v.
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