Abstract
In the last decade, UV-Excimer laser systems have been dramatically improved in terms of beam quality, power stability and gas lifetime. The benefits of using them for group IV semiconductor processing have, up to now, principally been recognized for some few processes like laser marking, UV-lithography and Excimer Laser Crystallization (ELC). Although several other techniques like Laser induced Chemical Vapor Deposition (LCVD), Excimer Laser Annealing (ELA) and Pulsed Laser Induced Epitaxy (PLIE) have been extensively studied 30 years ago for producing silicon coatings, little is known about the prospects of up-scaling those processes to other group IV semiconductors. This contribution presents UV-Laser processes combining LCVD of amorphous Si and of SiGeC alloys with their subsequent laser, in particular PLIE, treatment for modifying their composition and structure in order to engineer lattice parameters.
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