Abstract
With a gap-fill friendly "V'" profile, HARP can address the stringent gap fill requirements from 20nm STI and 32nm/28nm PMD with gate first HKMG with not much limitation to spacing CD. The weakest line in the STI trench can be addressed by adding steam into deposition steps or post-dep steam annealing. Dep-etch-dep approach would help to extend the gap fill application of HARP process. But in FinFET STI or PMD with RMG integration where "V" shape profile is difficult to be realized due to their unique integration flows, a FCVD process is needed to fulfill the gap-fill requirement. Excellent FCVD gap-fill has been demonstrated in high AR ratio FinFET STI and PMD even with straight vertical or reentrant profile. Some integration challenges like poor wet resistance and FCVD induced structured bending are addressed.
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