Abstract
Dynamic measurements of interfacial fracture surface energies γ have been carried out during the annealing of pairs of silicon, fused silica and borosilicate glass wafers, resp. Pronounced maxima of the resulting γ(t) curves could be detected in several cases, especially for plasma activated wafer pairs. In the present article the different phases of the bonding process are discussed and an interpretation is given for the formation of the γ(t) maxima. Moreover, influences of plasma activation at atmospheric pressure and at low pressure on the increase in surface energy during annealing are compared. Based on AFM roughness measurements, power spectral densities were determined for two debonded wafer pairs and the influence of the bond strength is discussed here.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
