Abstract
We report 3-D integrated CMOS image sensors with pixel-parallel A/D converters (ADCs). Direct bonding of silicon-on-insulator (SOI) wafers with gold electrodes embedded in a SiO2 surface achieves high-density pixel-wise interconnection in the sensor. Prototype 128 × 96 resolution sensors are developed on two SOI wafers with 16-bit ADCs for pulse frequency output integrated in every pixel. We have confirmed successful operation of capturing video images of 16-bit digital output and a wide dynamic range of 96 dB, demonstrating this type of 3-D integration provides functional diversification including circuits, sensors, and More-than-Moore type devices.
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