Abstract
Many of the characteristics of small geometry MOS transistors depend on the channel length, the channel width and the impurity profile. In this paper, we will describe the small geometry effect in terms of the charge sharing effect and the velocity saturation effect which result in the change in threshold voltage and the change in the intrinsic capacitance. The non-uniform doping which results in an increase in the ideality factor in the subthreshold region at short channel length will also be described. In addition, the maximum voltage limitation of the small geometry MOS devices due to punch through, avalanche, bipolar breakdown, electron injection into the gate oxide and the gate oxide breakdown will also be described.
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