Abstract

In this work we demonstrate a photonic interconnect made by Ge/SiGe multiple quantum well modulator and photodetector connected through a SiGe waveguide. The whole structure was grown on a silicon substrate in a single epitaxial step. We show that the Ge-rich Si1–xGex virtual substrate can act as a passive, high-quality optical waveguide on which low-temperature, epitaxial growth of Ge quantum well devices can be realized. Our approach can be extended to any Ge based optoelectronic device working within the telecommunications wavelengths and it is very promising for the realization of silicon based optical interconnections.

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