(Invited) Photo-Assisted Electron Emission from Silicon-Based Electron Emission Devices

Abstract

Ultrafast pulsed electron sources with spatial coherence have attracted significant interest in emerging applications such as scientific instruments of ultrafast electron microscopy [1-3] and electron beam lithography [4], and also as sources of X-ray [5] and micro- and THz-waves [6-9]. In particular, high-frequency electron bunch trains generated directly from the cathode surface can not only dramatically reduce dimensions and weight through the elimination of the pre-modulation circuit, but can also provide extremely high efficiency and improve the power in the electron beam devices due to coherence effects.One solution is employing photoemission from electron sources driven by ultrashort laser pulses for such emerging applications. Metallic flat photocathodes and recently metallic nanotips have been employed. However, a low quantum efficiency (QE), typically of approximately 0.01 %, and a large work function require a high-power UV laser to generate an intense electron beam. Negative electron affinity (NEA) semiconductor photocathodes such as NEA GaAs can provide QE as high as ~ 10 % [10], operating using visible laser light irradiation. However, the NEA surface is fragile and easily damaged by residual gas adsorption or beam extraction.In this presentation, we introduce the research and development of gated Si-FEAs with a volcano structure and planar-type electron emission devices based on a MOS diode structure and discuss the potential of the devices as a photocathode of the devices operating without NEA surface treatment. We investigate the optical properties of emitted electrons from the devices under visible laser light irradiation. The results indicate that Si-based electron emission devices with a fully optimized structure hold promise as a photocathode with a high QE and a high-speed response for generating a train of ultrashort electron bunches, operating without NEA surface treatment.