Abstract
Abstract A general overview of travelling-wave amplifiers is given, beginning with their vacuum-tube origins and progressing to the present ultra-broadband GaAs monolithic devices of today. Items addressed include limitations, future directions, input-output isolation, apodization, gain-peaking and automatic gain control. New contributions include (i) guidance on reducing amplifier noise by rendering the dipole-domain-generated noise contributed by the individual FETs incoherent, and (ii) the use of insulated gate FETs to permit higher gate breakdown voltage operation in the accumulation mode thereby resulting in very high power-added-effigiency, and (iii) connecting the distributed amplifiers for class B, push-pull operation to reduce even harmonics and further improve efficiency.
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