Abstract
Some insulating films of thickness normally between 10 nm and 600 nm in both sandwich and planar configurations (MIM devices) undergo a forming process in which the formed devices acquire a permanently, irreversibly enhanced conductivity, The I(V) characteristics with a region of voltage-controlled negative resistance (VCNR) are influenced by the fabrication methods, electrode metals and ambient conditions such as temperature and pressure. The emission of electrons through the top electrode becomes most apparent at the onset of the VCNR region. Switching and memory phenomena are also observed. In this paper we present a critical analysis of various electrical properties of MIM devices, with supporting experimental evidence.
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