Abstract

The precipitation of oxygen was investigated after rapid thermal annealing pre-treatments for 30 s in the range 1100-1250 °C and after flash lamp annealing for 3 ms and 20 ms with different irradiances up to melting of the wafer surface. It was found that the difference between thermal processing on the second and on the millisecond scales is based on the temperature profiles generated by the different types of processing. These profiles influence the shrinking of grown-in oxide precipitate nuclei and the generation, diffusion, and annihilation of intrinsic point defects. It was further found that pre-existing dislocations propagate into the wafer during flash anneals. The dislocation propagation can be well described by a three-dimensional mechanical model.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.