Abstract
On-current (Ion) variability in FinFETs is comprehensively investigated with regard to contributions of three independent sources, namely, threshold voltage (Vt), parasitic resistance (Rpara) and trans-conductance (Gm) variations. Origins of the Vt and Rpara variations are further analyzed. The Gm variation exhibits a linear relationship in Pelgrom plot as well as the Vt variation, and is not reduced with scaling the gate dielectric thickness unlike the Vt variation. Using the scalability data for the variation components, perspective of the Ion variability for 14-nm FinFETs reveals that the Gm variation will be the dominant Ion variation source. A solution to reduce the Gm variation for FinFETs is also proposed.
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