(Invited) NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 Heterojunction Lateral Rectifiers with Reverse Breakdown Voltage > 7kV

Abstract

There is significant recent interest in development of Ga2O3 power devices due to their capability for high temperature operation, reduced on-state and switching losses due to lower on-resistance for high voltage devices, and potentially higher frequency switching capability. These are targeted for renewable energy transmission systems, electric vehicle (EV) traction inverter and motor control systems, fast charging stations and more electric aircraft. Since the efficiency of EV powertrain inverters is partially determined by the efficiency of the switching transistors, it is of interest to examine ultra-wide-bandgap semiconductor electronics. The successful development of these power transistors is expected to significantly increase the longevity of a battery charge and the resultant cost of an EV.In this work, NiO/ β-(Al x Ga1-x )2O3 /Ga2O3 heterojunction lateral geometry rectifiers with diameter 50-100 µm exhibited maximum reverse breakdown voltages >7kV, showing the advantage of increasing the bandgap using the β-(Al x Ga1-x )2O3 alloy. This Si-doped alloy layer was grown by Metal Organic Chemical Vapor Deposition with an Al composition of ~20%. On state resistances were in the range 50-2180 Ω.cm2, leading to power figures-of-merit up to 0.72 MW.cm-2. The forward turn-on voltage was in the range 2.3-2.5 V, with maximum on/off ratios >700 when switching from 5V forward to reverse biases up to -100V. Transmission line measurements showed the specific contact resistance was 0.12 Ω.cm2. The breakdown voltage is among the highest reported for any lateral geometry Ga2O3-based device. Figure 1