Abstract
We have developed a novel conductivity based selective electrochemical etching to introduce nanometer sized pores into GaN. The nanoporous (NP) GaN can be considered as a new form of GaN with an unprecedented tunability in optical index. The advantages of NP-GaN for both edge-emitting laser diodes and vertical surface-emitting laser diodes (VCSEL) are subsequently exhibited.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
