Abstract
Effects of neutron irradiation on GaN-based materials were investigated. Temperature dependent Hall measurements were used to study the electrical property of two dimensional electron gases (2DEG). The mobility of 2DEG was sensitive to neutron, while sheet carrier density (ns) showed nearly no decrease until a fluence of 3.66×1015cm-2. Raman measurement was used to examine the strain in AlGaN/GaN heterostructure, and no peak shift was observed in the spectrum. In order to investigate the influence of neutron irradiation on the optical properties of GaN, persistent photo conductivity (PPC) and low temperature photoluminescence (PL) were measured. Pronounced PPC was observed, but no yellow luminescence (YL) band appeared in PL spectrum measured at 5K, suggesting that PPC and YL were not related. Thermal stimulated current (TSC) and low temperature photoluminescence (PL) techniques were used to determine the position of deep levels in GaN with high resistance. Four traps are identified in neutron irradiated GaN.
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