Abstract
Hysteresis of InGaZnO thin-film transistor (IGZO TFT) under negative-bias with illumination stress (NBIS) was investigated using double sweeping gate voltage (VGS) mode. We found that hysteresis of IGZO TFT was significantly enlarged by the NBIS with large negative gate voltage stress. On-current and S value in forward measurements started to show degradation under large-negative VGS stress due to acceptor-like defect creation; on the other hand, transfer curves in reverse measurements shifted to a positive VGS direction without S degradation. As a result of NBIS degradation, huge hysteresis can be observed. To explain the change in hysteresis under NBIS, degradation model consisting of acceptor-like bistable defects is proposed.
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