Abstract
We developed a new technique for heteroepitaxial growth on Si substrates, we call nanocontact epitaxy. In this technique, elastically strain-relaxed nanodots (NDs) formed by ultrathin SiO2 film technique are used as seed crystals for film growth. Using this technique, we grew high quality Ge thin films on Si(001) substrates where there is 4% lattice mismatch. Furthermore, we succeeded in the epitaxial growth of high quality GaSb thin films on Si(001) substrates with large lattice mismatch (~12%). We observed strong photoluminescence from these thin films. This demonstrated the nanocontact epitaxy is promising as a new heteroepitaxial growth technique applicable to large lattice mismatch system.
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