Abstract

Homogeneous amorphous metal oxide thin films can be transformed into heterogeneous structures for novel electronic, optoelectronic, thermal, and other applications. In all applications, the high quality dielectric properties of the original amorphous film remain unchanged, which is critical to device functions. Detailed discussions are carried out on processes of structure changes, mechanisms of device operations, and reliability issues. Examples of applications of the new heterogeneous metal oxide thin films on memories, diodes, antifuses, SSI-LEDs, microdisplays, on-chip optical interconnection systems, and nano-heaters are shown and discussed.

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