Abstract
The discovery of hydrogen-induced electron localization in d-band electron correlated perovskites has opened a new paradigm for exploring novel electronic phases of condensed matters and applications in emerging field-controlled electronic devices (e.g. Mottronics). We report the discovery of an unexpected high-concentration doping effect in defective regions for correlated oxides. It enables electronic conductance by tuning the Fermi-level in Mott-Hubbard band and shaping the lower Hubbard band state into a partially filled configuration. We perform interface engineering and grain boundary designs for correlated heterostructures, and achieve a Mottronic device that switches its band gap from above 3 eV to 0 eV. We control and quantify the interfacial aggregation of hydrogen to establish its correlation with the electrical transport properties. The present work unveils new materials physics in correlated materials and suggests novel doping strategies for developing Mottronic and iontronic devices.
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