Abstract
We investigated the electrical and optical properties of our two previously proposed Ge optical emitters, lateral-carrier-injected Ge waveguides and Ge-fins fabricated on the buried oxide layer of a silicon-on-insulator wafer. Intense photoluminescence spectra from both structures show that good crystallinity and sufficient carrier confinement can be achieved, and the obvious red-shifts of the peaks were observed due to the tensile strain in the Ge active region applied through the fabrication processes. The enhanced electroluminescence corresponding to the direct recombination at the G-valley was also observed by injecting forward currents into the Ge active regions. These results indicate that these device structures efficiently improve the performance of Ge optical emitters.
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