(Invited) Monolayer h-BN: Epitaxy, Properties, and Emerging Device Applications

Abstract

Hexagonal boron nitride (h-BN) has shown tremendous promise when used alongside other two-dimensional (2D) materials such as graphene, and as a wide-bandgap semiconductor for deep-ultraviolet optoelectronics and quantum photonics. Owing to its large bandgap energy comparable or higher than Al(Ga)N, h-BN can be used to form heterostructures to address some of the critical challenges of Al(Ga)N-based systems. To date, however, many fundamental material properties of h-BN remain unknown. For example, its bandgap energy remains under debate, with reports spanning from 5.9 to 6.5 eV. There is also strong controversy as to whether h-BN has a direct or indirect bandgap. In this context, We have studied the epitaxy of h-BN by using ultrahigh temperature (up to 1850 °C) plasma-assisted molecular beam epitaxy (MBE) on sapphire, Ni and HOPG substrates. We show that, when grown at sufficiently high temperature, h-BN can exhibit predominantly excitonic emission at ~220 nm. The measured luminescence intensity is orders of magnitude higher than AlN under identical conditions. By forming a p-i-n structure using this high-quality h-BN as the active region, the current-voltage (I-V) and electroluminescence characteristics of a first demonstration of a h-BN deep UV LED will be reported.