(Invited) Modified SAB Methods for Hybrid and All-Cu Bonding for 3D Integration below 200ºC

Abstract

Two methods of Surface Activated Bonding (SAB) will be proposed to enable low-temperature hybrid bonding for 3D integration.A modified one involves surface activation processes using Ar fast-atom-beam bombardment with simultaneous co-sputtering of Si nano-adhesion layer, followed by sequential plasma irradiation with N2 radicals. These processes combine hydrophilic treatment and bonding in a low-vacuum chamber. The Si nano-adhesion layer and the sequential plasma treatment appear to enhance hydrophilicity, which enables low-temperature bonding of both Si oxides and Cu pads as hybrid bonding. Bonding in a low-vacuum environment helps to avoid void generation caused by air entrainment.The other one is the standard SAB. But we will connect two device wafers not in a hybrid bonding but in all-Cu bonding. A small insulation layer surrounds the area around the Cu electrode on the wafers, while the rest is covered with Cu solid layers. These solid layers constitute the ground layer, power layer, or their paired layers and may contribute to heat dissipation when connected to thermal vias. The two wafers are connected only by bonding on the Cu electrodes and solid layers. The insulating parts around the Cu electrodes do not necessarily have to be bonded, and the gaps may be kept in a vacuum. Of course, the bonded surfaces need to be flattened, and a new division and layout design of the solid electrode will be required.Cu-Cu direct bonding is possible at room temperature by applying the standard SAB directly. Of course, this requires bonding in an ultra-high vacuum condition, which inevitably reduces the throughput. However, room temperature bonding is overwhelmingly advantageous for bonding different types of devices and wafers. It is expected to become a powerful tool for 3D heterogeneous integration of devices in the future. Figure 1