Abstract
A "meta" model for electrochemical pore growth in semiconductors is presented which is essentially based on two assumptions: i) current flow at the etching interface occurs in current bursts and not by constant current flow and ii) current flow depends on the passivation behavior at the etching interface. The meta model is thus not sensitive to factors like the semiconductor material or the detailed dissolution chemistry. In order to demonstrate the concept of the meta model a number of recent results in InP will be discussed. The treatise includes the mechanism of currentline and crystallographical pore growth, as well as the reasons for the characteristic transition between both pore growth modes. A numerical Monte Carlo model for pore growth based on the meta model, which is capable of closely simulating a number of pore structures, will also be presented.
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